FIELD: ohmic contacts for microelectronic devices such as microwave field-effect transistors.
SUBSTANCE: proposed method includes sequential evaporation of Ti, Al, Ni, Au onto section of AlGsN surface layer and fast thermal annealing of semiconductor heterostructure; fast thermal annealing is conducted using contact method and graphite resistive heater, semiconductor heterostructure being disposed on heater surface. In the course of annealing temperature of GaN/AlGsN semiconductor heterostructure is controlled to ensure reproducibility of its parameters.
EFFECT: facilitated procedure, reduced time requirement, enhanced quality of heterostructure.
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