METHOD FOR MANUFACTURING OHMIC CONTACTS OF POWERFUL ELECTRONIC DEVICES Russian patent published in 2021 - IPC H01L21/00 H01L21/28 

FIELD: electronic engineering.

SUBSTANCE: method for manufacturing ohmic contacts of high-power electronic devices on a semiconductor heterostructure based on gallium nitride, including the formation of a given topology of ohmic contacts on a given outer layer of the said semiconductor heterostructure, the application of the ohmic contact material in the form of a direct sequence of a given system of its layers, in vacuum, according to a given topology, thermal annealing in an inert medium, in which the said application of the ohmic contact material is carried out in the form of a direct sequence of a system of metal layers, titanium-aluminum-nickel-gold, (25-35)-(115-125)-(25-35)-(95-105) nm thick, respectively, before thermal annealing, a layer of silicon nitride, 45-55 nm thick, is applied to a given outer layer of a semiconductor heterostructure, with the applied material of ohmic contacts in the form of a direct sequence of a system of metal layers of titanium-aluminum-nickel-gold, by plasma chemical deposition from the gas phase of the composition, m³ ×10^-6 under standard conditions: monosilane, ammonia, nitrogen at their ratio (15-25), (95-105), (1400-1600) accordingly, with the frequency of plasma generation (379-381) kHz, and thermal annealing is carried out in two stages: at the first one at a temperature of (645-655)°C, for (25-35) sec, at the second - at a temperature of (795-805)°C, for (85-95) sec.

EFFECT: reducing the resistivity, improving the surface morphology, preserving the physico-chemical structure of the initial semiconductor heterostructure, increasing the output power and reducing the noise coefficient of a powerful electronic device.

4 cl, 4 dwg, 1 tbl