PHOTODETECTOR BASED ON STRUCTURE WITH QUANTUM WELLS Russian patent published in 2016 - IPC H01L27/14 H01L31/04 

FIELD: electricity.

SUBSTANCE: invention relates to photosensitive semiconductor devices operating in infrared part of spectrum, and can be used in designing mono- and multi-element radiation receivers with photosensitive elements on basis of quantum well structure. Photodetector based on structure with quantum wells includes semi-insulating substrate of GaAs, on which are grown heavily doped lower and upper contact layers of GaAs, and between them multiple periods barrier-pit composition Al_x Ga_1-x As-GaAs, in which at boundaries of barrier-pit there are areas of energy of conduction bottom lifting barrier, formed in it Al_xGa_1-xAs, penetrating through multiple periods of barrier-pit between upper and lower contact layers and having characteristic thickness in plane of layers and concentration of alloying admixture such that region of space charge at boundaries with quantum wells distributed over entire thickness of said regions.

EFFECT: high operating temperature and, therefore, considerable reduction of requirements to cooling system, reduces power consumption and weigh and overall characteristics of equipment based on it.

1 cl, 4 dwg