METHOD FOR DETERMINING THE SUFFICIENCY OF THE DEPTH OF ION-BEAM ETCHING OF QWIP STRUCTURES Russian patent published in 2022 - IPC H01L31/18 

FIELD: microelectronics.

SUBSTANCE: invention relates to the field of microelectronics and can be used in the manufacture of matrix photosensitive elements (MPSE) on quantum wells (QWIP). The objective of the present invention is a method for determining the sufficiency of the depth of ion-beam etching of complex semiconductor structures with different etching rates of the layers that make up the structure, with inclined side surfaces of the mesa elements of the matrix, with ensuring the necessary sufficiency of the etching depth of the structure to the lower contact layer n+, without violating the connectivity (integrity) of the lower contact layer, which ensures separation of a continuous heteroepitaxial structure into a set of mesa matrix elements connected by a lower contact layer, open for connection to the reading circuit. The expected result is achieved by the fact that the mesa elements in the MPSE are formed by ion-beam etching with ions of an inert gas, for example, argon, in complex epitaxial structures consisting of layers with different etching rates, up to the contact layer n+. The sufficiency of the etching depth is determined by the time required for etching the structure before the groove bottom intersects with the shallowness of the lower contact layer, by the known values of the ion beam etching rates along the normal to the surface of the contact layers and the active region and the cosines of the angles formed between the normal and the lateral surface of the mesa element.

EFFECT: expansion of the range of solutions for producing matrix photosensitive elements.

1 cl, 3 dwg