TEMPLATE FOR EPITAXIAL GROWTH, A METHOD FOR PRODUCING IT AND A NITRIDE SEMICONDUCTOR DEVICE Russian patent published in 2018 - IPC H01L21/20 

FIELD: biotechnology.

SUBSTANCE: present invention provides a method for obtaining a template for epitaxial growth. Method comprises a surface treatment step comprising dispersing Ga atoms on the surface of the sapphire substrate and an epitaxial growth step of the AlN layer on a sapphire substrate, where distribution of concentration of Ga in the depth direction perpendicular to the surface of the sapphire substrate in the inner region of the AlN layer, excluding the zone near the surface to a depth of 100 nm from the surface of the AlN layer, excluding the zone near the surface to a depth of 100 nm from the surface of the AlN layer obtained by secondary ion-mass spectrometry, the position in the depth direction, where Ga – the concentration has a maximum value, is located in the region near the interface located between the interface of the sapphire substrate and the position at 400 nm spaced from the interface to the side of the AlN layer, and the maximum Ga-concentration is 3 × 10¹⁷ atom/cm³ or more and 2 × 10²⁰ atom/cm³ or less.

EFFECT: invention provides a template without cracks and dislocations to simplify epitaxial growth.

7 cl, 7 dwg