SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING SEMICONDUCTOR STRUCTURE Russian patent published in 2010 - IPC H01L33/24

Abstract RU 2391746 C2

FIELD: physics.

SUBSTANCE: semiconductor structure is formed from nitrides of group III metals with wurtzite crystal structure and is grown in vapour phase on a semiconductor substrate with orientation (0001). The structure includes a bottom coating layer, a top coating layer and a scattering region lying between the coating layers for scattering light propagating in the semiconductor structure. The scattering region has refraction index different from refraction indices of the coating layers, and has non-planar surfaces to provide scattering boundary surfaces between the scattering region and the coating layers. According to the invention, the scattering region includes several scattering layers, where composition and thickness of the said scattering layers are selected so as to avoid dislocation formation caused by stress in the scattering region, and adjacent scattering layers have different refraction indices in order to further increase scattering efficiency.

EFFECT: efficient light scattering with simple manufacturing technology.

14 cl, 3 dwg

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RU 2 391 746 C2

Authors

Bugrov Vladislav E.

Odnobljudov Maksim A.

Dates

2010-06-10—Published

2006-06-20—Filed