METHOD FOR ESTIMATING MICROSTRUCTURE OF ELECTRON CURRENT FLUCTUATIONS IN MEMRISTOR FILAMENT Russian patent published in 2021 - IPC H01L45/00 

FIELD: nanotechnologies.

SUBSTANCE: invention relates to the field of nanotechnologies, namely to methods for measuring electrical-physical parameters of filaments (conductive threads) in memristor structures, it can be used for estimating electron current fluctuations in the specified filaments. The method for estimating electron current fluctuations in a memristor filament includes measurement of the flicker component of the frequency range of the low-frequency noise of the electron current in the memristor filament in a low resistive state using a current meter that provides for local measurement at the site of filament outlet to the surface of one of the memristor electrodes and determination of the electron current fluctuations caused by random oxygen ion surges setting the stability of the memristor. The measurement of the specified flicker component S_f (f)=A_f/f^a is carried out according to its two parameters – the height A_f and the shape α. At the same time, using an additional measuring unit in the specified current meter, the resistance R of the memristor filament is measured by direct current in a low resistive state, which is used to determine the number of oxygen ions M that perform random surges between adjacent internodes in the memristor filament by proportional comparison of the specified resistance R, corresponding to the number of oxygen ions M, with the calculated resistance R₀ of the memristor filament, corresponding to the filling with oxygen ions of all M_L cells of the memristor crystal lattice in the memristor filament, with the determination of the memristor filament resistance and the number M_L of the specified cells according to the given initial formulas. Based on two parameters of the flicker component – the height A_f and the shape α obtained in the specified way, as well as the number of oxygen ions M, the required electron current fluctuations in the memristor filament are determined expressed by the mean-square value of the specified current surges i₀ according to the given final formula.

EFFECT: invention provides an increase in the efficiency of estimating electronic current fluctuations by determining the mean-square value of random electronic current surges based on proven measurement methods with high resolution and ease of implementation, expansion of the diagnostic capabilities in the proposed method in the scope of evaluating the microstructure of the specified electronic current fluctuations.

1 cl, 4 dwg