MIXED METAL OXIDE-BASED MEMRISTOR Russian patent published in 2014 - IPC H01L45/00 B82B1/00 

FIELD: chemistry.

SUBSTANCE: memristor devices are nonvolatile memory devices and can be used to design computer systems based on an artificial neural network architecture. The present device consists of an active layer situated between two current-conducting layers with which it is in electrical contact. The active layer has a resistive switching property and is a double-layer oxide structure HfAl_xO_y/HfO₂. The HfAl_xO_y layer has high solubility and high equilibrium concentration of oxygen vacancies, and HfO₂ is a layer with low solubility of vacancies. The current-conducting layers are made of titanium nitride or tungsten nitride. A super-thin layer of ruthenium oxide with thickness of not less than 0.5 nm is deposited on the HfO₂/TiN boundary surface.

EFFECT: high stability of modes of switching resistance to a low- and high-ohmic state, low switching voltage, high technological compatibility with existing silicon-based microcircuit manufacturing processes.

3 cl, 2 dwg