METHOD FOR PRODUCING THIN FILMS OF ZINC OXIDE OR TIN OXIDE, OR MIXED ZINC AND TIN (IV) OXIDES Russian patent published in 2021 - IPC C01G9/02 C01G19/02 B82B3/00 B82Y40/00 

FIELD: chemistry.

SUBSTANCE: invention relates to the field of thin-film technology, namely, to production of thin films of zinc and tin oxides, usable as photocatalysts, sensitive layers in semiconductor gas sensors, protective coatings, liquid crystal display elements, elements of transparent electronics. The method for producing thin films of zinc oxide, or tin oxide, or mixed zinc and tin (IV) oxides includes forming thin films of said oxides on substrates by the method of contact with a solution containing an organic solvent, with further drying and subsequent thermal annealing, wherein glass, polycore or silicon is used as a substrate material, thin films of pure phases of zinc or tin oxides are formed from a solution of zinc (Zn(C₁₉H₂₉COO)₂) or tin (Sn(C₁₉H₂₉COO)₄) abietate, respectively, thin films of mixed zinc and tin (IV) oxides are formed from solutions of zinc (Zn(C₁₉H₂₉COO)₂) and tin (Sn(C₁₉H₂₉ CO)₄) abietate with a zinc to tin ratio from 0.5:99.5 to 99.5:0.5 mol.%, 1,4-dioxane, or heptane, or hexane, or ethyl acetate, or acetone, or ethyl alcohol is used as an organic solvent, immersion or centrifugation is used as a contact method, and the thickness of the films is adjusted by the amount of applied layers of zinc and/or tin abietate solution(s) and further drying.

EFFECT: production of thin films of zinc oxide or tin oxide or mixed zinc and tin (IV) oxides on solid substrates, transparent in the visible light range, with a possibility of adjusting the thickness of said films from 30 nm to 200 nm, wherein zinc oxide and tin (IV) oxide are in the crystalline phases with the crystallite sizes between 10 and 30 nm.

6 cl, 3 dwg, 6 ex