METHOD OF PRODUCING THIN TRANSPARENT GAS-SENSITIVE FILMS TiO-SnO Russian patent published in 2024 - IPC H01B1/08 

FIELD: chemistry.

SUBSTANCE: invention relates to thin-film technology of producing oxide semiconductor nanomaterials. Method involves formation of thin films of TiO₂-SnO₂ or mixed oxides of tin (IV) and titanium (IV) on substrates by immersion with further drying and subsequent thermal treatment at temperature of 500 °C for 2 hours. Glass is used as substrate material. Formation of thin films of pure phases of tin or titanium oxides is carried out from solutions abietates of titanium (Ti(C₁₉H₂₉COO)₄) and tin (Sn(C₁₉H₂₉COO)₄). Formation of thin films of mixed oxides of titanium (IV) and tin (IV) is carried out from solutions abietates of titanium (Ti(C₁₉H₂₉COO)₄) and tin (Sn(C₁₉H₂₉COO)₄) with ratio of titanium (IV) to tin(IV) from 95 to 5 to 99 to 1 mol.%, containing crystallites of metal oxides with size from 6 to 16 nm. Thickness of the films is controlled from 30 nm to 250 nm. When depositing two nickel contacts, having a gas-sensitive response in range of 175-395 to nitrogen dioxide with concentration of 10 ppm at an operating temperature of 200 °C.

EFFECT: invention enables to obtain films which are transparent in the visible range of light with optical transmission coefficient of at least 80%.

5 cl, 5 dwg