FIELD: thin film technology.
SUBSTANCE: invention relates to the production of thin transparent gas-sensitive films of ZnO-TiO2, which can be used as sensitive layers in semiconductor gas sensors, protective coatings, liquid crystal display elements, elements of transparent electronics, photocatalysts, etc. The method for producing films of ZnO-TiO2 or mixed oxides of zinc(II) and titanium(IV) includes the formation of thin films on substrates by immersion with further drying and subsequent heat treatment at a temperature of 500°C for 2 hours; glass is used as the substrate material, the formation of thin films of pure phases of zinc or titanium oxides is carried out based on the solutions of zinc abietates (Zn(C19H29COO)2) and titanium (Ti(C19H29COO)4).
EFFECT: production of thin films of controlled thickness with gas-sensitive properties.
8 cl, 5 dwg, 7 ex
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