FIELD: nanotechnology.
SUBSTANCE: invention relates to the field of nanotechnology, namely, to methods for forming nanomaterials in the form of nanolithography patterns with an ordered structure with an over-developed surface, and can be used to produce new-generation nano- and microelectronics devices. The essence of the invention lies in the fact that by mechanical action of the probe on a silicon substrate, a spatial profile is formed in the form of an area of a given geometry, after which film-forming sols based on 2-aminoethanol, 2-methoxyethanol, zinc acetate and sodium acetate are additionally applied to the surface of the substrate as part of the sol-gel synthesis method. Then, in parallel, low-temperature annealing at 80°C and photo-annealing with ultraviolet radiation of the wavelength range are carried out, as a result of which a nanolithography pattern with an ordered structure with an over-developed surface is formed in the area of the spatial profile.
EFFECT: possibility of forming nanomaterials in the form of nanolithography patterns with an ordered structure with an over-developed surface is ensured.
1 cl, 2 dwg
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