PUSH-PULL GALLIUM ARSENIDE BUFFER AMPLIFIER WITH A SMALL DEAD ZONE OF THE AMPLITUDE CHARACTERISTIC Russian patent published in 2023 - IPC H03F3/45 

FIELD: microelectronics.

SUBSTANCE: invention relates to the field of analog microelectronics and can be used as a gallium arsenide output stage of various analog devices that can operate under the influence of penetrating radiation, low and high temperatures. A push-pull gallium arsenide buffer amplifier with a small dead zone of the amplitude characteristic contains the input (1) and output (2) of the device, a signal source (3) connected to the input (1) of the device, an output bipolar transistor (4), the base of which is connected to the input (1) of the device, and the collector is connected to the first (5) bus of the power supply, and the output of the device (2) is connected to the emitter of the output bipolar transistor (4), the input field-effect transistor (6), the drain of which is matched with the second (7) bus of the power supply, an auxiliary current source (8) matching the p-n junction (9). The gate of the input field-effect transistor (6) is connected to the input (1) of the device, its source is connected to an auxiliary current source (8) and connected to the gate of an additional field-effect transistor (10), the drain of the additional field-effect transistor (10) is matched with the second (7) bus of the power supply, and the source is connected to the output (2) of the device through a matching p-n junction (9) and connected to the drain of the input field-effect transistor (6).

EFFECT: creation of a buffer amplifier implemented using JFET gallium arsenide field-effect transistors with a control p-n junction and bipolar GaAs p-n-p transistors and providing a small dead zone of the amplitude characteristic.

2 cl, 7 dwg