GALLIUM ARSENIIDE OUTPUT STAGE OF A FAST OPERATIONAL AMPLIFIER Russian patent published in 2022 - IPC H03F3/45 

FIELD: analog microelectronics.

SUBSTANCE: invention relates to the field of analog microelectronics and can be used as a gallium arsenide output stage of various GaAs analog devices, including high-speed operational amplifiers (OA) that can operate under conditions of penetrating radiation, low or high temperatures. The gallium arsenide output stage of a high-speed operational amplifier contains an input (1) and an output (2) of the device, an input (3) and an output (4) p-n-p transistors, a current-stabilizing bipolar (5), the first (6) and second (7) source buses nutrition. An additional p-n-p-transistor (8), the first (9) and second (10) additional field-effect transistors with a control p-n junction, as well as the first (11) and second (12) additional current-stabilizing two-poles are introduced into the circuit.

EFFECT: creation of an output stage of an operational amplifier implemented on JFET gallium arsenide field-effect transistors with a control p-n junction and bipolar GaAs p-n-p transistors, which provides output currents of positive i_n⁽⁺⁾ and negative i_n^(-) directions in the load Rn (Fig.1), and also accelerates the process of recharging the load capacitance C_l, which is important for high-speed OA.

3 cl, 9 dwg