GALLIUM ARSENIDE BUFFER AMPLIFIER BASED ON n-CHANNEL FET AND p-n-p BIPOLAR TRANSISTORS Russian patent published in 2022 - IPC H03F3/45 

FIELD: microelectronics.

SUBSTANCE: invention relates to the field of microelectronics. To achieve the effect, a gallium arsenide buffer amplifier based on n-channel field-effect and p-n-p bipolar transistors is proposed, which contains an input (1) and an output (2) of the device, an input n-channel field-effect transistor (3), the first (4) power supply bus, two-terminal load (5), a common power supply bus (6), the second (7) power supply bus. The first (8) additional gallium arsenide p-n-p bipolar transistor and the first (9) additional gallium arsenide field-effect transistor with n-channel are introduced into the circuit.

EFFECT: creation of a push-pull buffer amplifier based on JFET gallium arsenide field-effect transistors with a control p-n-junction and bipolar GaAs p-n-p transistors, which has a low static current consumption and ensures the stability of the main parameters in the range of external influences.

7 cl, 11 dwg