SEMICONDUCTOR INFRARED DETECTOR Russian patent published in 2013 - IPC H01L31/09 

FIELD: physics.

SUBSTANCE: semiconductor infrared detector includes a semiconductor substrate (1) AIIIBV with an active region (2) in form of a disc with a hole in the centre based on a heterostructure made from solid solutions AIIIBV, a first ohmic contact (4) and a second ohmic contact (7). The first ohmic contact (4) is deposited on the surface (3) of the active region (2). The second ohmic contact (7) is deposited on the surface (6) of the peripheral region (8) of the semiconductor substrate (1), lying opposite the surface with the active region (2). There is at least one depression (10) in the surface (6) of the central region (9) of the semiconductor substrate (1) free from the second ohmic contact (7).

EFFECT: invention enables to make a semiconductor infrared detector which, along with a wider spectral sensitivity region in the middle infrared region of 2-5 mcm, has high quantum efficiency and lower density of backward current.

6 cl, 9 dwg