GALLIUM BUFFER AMPLIFIER Russian patent published in 2022 - IPC H03F3/45 

FIELD: analog microelectronics.

SUBSTANCE: invention relates to the field of analog microelectronics, providing operation under conditions of exposure to penetrating radiation, low and high temperatures. The gallium arsenide buffer amplifier contains the first (1) and second (2) inputs of the device, the first (3) and second (4) field-effect transistors with a control p-n junction, the sources of which are combined and connected to the output (5) of the device, the first ( 6) power supply bus, current mirror (7) matched with the first (6) power supply bus, the output of the current mirror (7) is connected to the second (8) power supply bus through the reference current source (9). Between the output of the current mirror (7) and the reference current source (9), a matching two-terminal network (10) is connected, the output (5) of the device is connected to the emitter of an additional bipolar transistor (11), the collector of which is connected to the second (8) power supply bus, and the base additional bipolar transistor (11) and the second (2) input of the device are connected to the outputs of the matching bipolar (10).

EFFECT: creating a buffer amplifier implemented on JFET gallium arsenide field-effect transistors with a control p-n junction and bipolar GaAs p-n-p transistors, which provides output currents of positive i_H⁽⁺⁾ and negative i_H^(-) directions in the R_H load.

7 cl, 8 dwg