GALLIUM BUFFER AMPLIFIER Russian patent published in 2022 - IPC H03F3/45 

FIELD: microelectronics.

SUBSTANCE: invention relates to the field of microelectronics. To achieve the effect, a gallium arsenide buffer amplifier is proposed, which contains an input (1) and an output (2) of the device, an input field-effect transistor (3), the first (4) power supply bus, an output bipolar transistor (5), a second (6) source bus power supply, the first (7) current-stabilizing two-terminal network. The first (8) and second (9) bipolar transistors are introduced into the circuit, the bases of which are combined and connected to the output (2) of the device and the collector of the first (8) bipolar transistor, the emitters of the first (8) and second (9) bipolar transistors are connected to the source input field effect transistor (3), and the collector of the second (9) bipolar transistor is connected to the base of the output bipolar transistor (5).

EFFECT: creation of a push-pull buffer amplifier implemented on JFET gallium arsenide field-effect transistors with a control p-n junction and bipolar GaAs p-n-p transistors, which has a low static current consumption and provides bidirectional currents in a relatively low-resistance load.

1 cl, 6 dwg