FIELD: chemical processes.
SUBSTANCE: invention relates to equipment for growing a gallium oxide single crystal by the VB method. Crucible 10 for growing a gallium oxide single crystal comprises a top section 18 of a thickness less than the thickness of the lower section 12 of the crucible 10, wherein the top section 18 of the crucible 10 has a constant diameter; and a reinforcing tape material 22 provided on the external periphery of a constant-diameter section of the crucible including multiple tape materials 22a in the axial direction of the crucible 10 provided at equal intervals in the circular direction of the crucible, wherein the reinforcing tape material 22 includes one or multiple tape materials 22b provided in a ring shape on the external periphery of the constant-diameter section.
EFFECT: proposed crucible structure provides a balance between the thickness and strength of a constant-diameter section of the crucible and is suitable for growing a large-diameter crystal.
8 cl, 6 dwg, 1 ex
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