DEVICE FOR OBTAINING A GALLIUM OXIDE CRYSTAL Russian patent published in 2022 - IPC C30B11/00 C30B29/16 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of electrical engineering, namely to a device for producing a crystal of gallium oxide. Obtaining a single crystal of gallium oxide of a larger size with an increase in the quality of the crystal structure in the crystal (grown by the vertical Bridgeman method) is the result of the invention, which is achieved by the fact that the device contains a crucible for holding the initial material of gallium oxide in it, a crucible support that supports the crucible from below, a crucible support shaft that connects to the crucible support from below and vertically movably supports the crucible and the crucible support, a pipe core of a pipe furnace that surrounds the crucible, the crucible support and the crucible support shaft, the inner tube of the tube furnace, which surrounds the tube of the core of the furnace, and a resistive heating element, including a heat-generating section located in the space between the core tube of the furnace and the inner tube of the furnace, while the melting points of the core tube of the furnace and the inner tube of the furnace are equal to at least 1900°C, and the thermal conductivity of the section of the core tube of the furnace, located directly next to the crucible in its radial direction, is higher than the thermal conductivity of the inner tube of the furnace.

EFFECT: expansion of the range of methods for obtaining gallium oxide crystals.

7 cl, 13 dwg, 7 tbl