DEVICE FOR MANUFACTURE OF GALLIUM OXIDE CRYSTAL, METHOD FOR MANUFACTURE OF GALLIUM OXIDE CRYSTAL AND CRUCIBLE FOR GROWING GALLIUM OXIDE CRYSTAL, USED FOR IT Russian patent published in 2022 - IPC C30B11/00 C30B29/16 C30B35/00 

FIELD: chemistry.

SUBSTANCE: invention relates to devices for the manufacture of a gallium oxide crystal, which is a wide-band semiconductor for a power device. A crucible for growing gallium oxide crystals, using VB method, HB method or VGF method in the air atmosphere, contains an alloy based on Pt-Ir with a content of Ir from 20 to 30 wt.%, having heat resistance capable of withstanding a temperature of 1800°C. Device 10 for the manufacture of a gallium oxide crystal contains a vertical Bridgman furnace including main case 12, furnace case 14 of a cylindrical shape, having thermal resistance, located on main case 12, cover 18 covering furnace case 14, heater 20 located inside furnace case 14; crucible holder 30 located vertically with the possibility of passage through main case 12, and crucible 34 located on crucible holder 30, heated with heater 20, wherein crucible 34 contains an alloy based on Pt-Ir with a content of Ir from 20 to 30 wt.%, having heat resistance capable of withstanding a temperature of 1800°C.

EFFECT: invention allows for obtaining colorless transparent gallium oxide crystals of a large size and high quality.

5 cl, 7 dwg, 2 tbl