APPARATUS AND METHOD OF PRODUCING A GALLIUM OXIDE CRYSTAL Russian patent published in 2020 - IPC C30B11/00 C30B15/14 C30B29/16 

FIELD: technological processes.

SUBSTANCE: invention relates to production of a gallium oxide crystal, which is a wide-gap semiconductor for producing high-power devices, which are placed on material of crystalline silicon. Gallium oxide crystal is obtained by growing in an atmosphere with oxygen content of 10 to 50 % using a device, containing furnace 10 for crystal growth by vertical Bridgman method, including support plate 12, cylindrical heat-resistant housing 14 located above support plate 12, cover 18, closing housing 14, heater 20 located inside housing 14, crucible rod 24 capable of vertical movement through support plate 12, and crucible 30 located on crucible rod 24, heated by means of heater 20, at that crucible 30 is made of Pt—Rh based alloy with Rh content ranging from 10 to 30 wt %, and housing 14 has inner heat-resistant wall 32, comprising a plurality of ring-shaped heat-resistant elements, each having a predetermined height superimposed one on the other, each of ring-shaped heat-resistant elements contains multiple separate parts, which are connected to each other in form of ring.

EFFECT: invention enables to obtain crystals β—Ga₂O₃ of high quality and large size (diameter of up to 5_08 cm).

15 cl, 1 ex, 18 dwg