FIELD: analogue microelectronics.
SUBSTANCE: invention relates to the field of analogue microelectronics and can be used in various analogue and analogue-to-digital interfaces (active RC filters, normalizing converters, etc.). The operational amplifier with a low level of the systematic zero bias voltage component additionally contains the first (13), second (14) and third (15) additional field-effect transistors, as well as the first (16) additional reference current source. The gate of the first (13) additional field effect transistor is connected to the gate of the first (10) output field effect transistor. The drain of the first (13) additional field effect transistor is connected to the drain of the first (10) output field effect transistor and the gate of the second (14) additional field effect transistor. The gate of the third (15) additional field effect transistor is connected to the gate of the second (14) additional field effect transistor. The drains of the second (14) and third (15) additional field-effect transistors are combined and connected to the current output of the device (12). Between the current output of the device (12) and the first (6) power supply bus, the first (16) additional reference current source is connected. The sources of the first (13), second (14) and third (15) additional field-effect transistors are connected to the second (9) power supply bus.
EFFECT: providing a low-level systematic component of the zero bias voltage with an operational amplifier under conditions of a change in the supply voltage.
5 cl, 8 dwg
Title | Year | Author | Number |
---|---|---|---|
GALLIUM ARSENIDE OPERATIONAL AMPLIFIER WITH HIGH GAIN AND LOW LEVEL OF SYSTEMATIC COMPONENT OF ZERO OFFSET VOLTAGE | 2023 |
|
RU2820562C1 |
DIFFERENTIAL OPERATIONAL AMPLIFIER ON FIELD-EFFECT TRANSISTORS WITH CONTROL P-N JUNCTION | 2020 |
|
RU2739577C1 |
RADIATION-RESISTANT MULTIDIFFERENTIAL OPERATIONAL AMPLIFIER FOR OPERATION AT LOW TEMPERATURES | 2016 |
|
RU2628131C1 |
OPERATIONAL AMPLIFIER BASED ON WIDE-BAND SEMICONDUCTORS | 2023 |
|
RU2822157C1 |
HIGH-PRECISION TWO-STAGE DIFFERENTIAL OPERATIONAL AMPLIFIER | 2015 |
|
RU2615070C1 |
PRECISION GALLIUM ARSENIDE OPERATIONAL AMPLIFIER WITH LOW LEVEL OF SYSTEMATIC COMPONENT OF ZERO OFFSET VOLTAGE AND HIGH GAIN | 2023 |
|
RU2813370C1 |
LOW OFFSET GALLIUM ARSENIDE OP AMP | 2023 |
|
RU2812914C1 |
BIPOLAR-FIELD OPERATIONAL AMPLIFIER | 2015 |
|
RU2583760C1 |
MULTIDIFFERENTIAL OPERATIONAL AMPLIFIER | 2015 |
|
RU2621287C2 |
GALLIUM ARSENIDE OPERATIONAL AMPLIFIER FOR OPERATION IN WIDE TEMPERATURE RANGE | 2023 |
|
RU2814685C1 |
Authors
Dates
2022-09-21—Published
2022-04-01—Filed