FIELD: metallurgy.
SUBSTANCE: formation method of thin tungsten carbide films involves application of thin tungsten-containing film on semiconductor substrate and carbothermic synthesis; at that, thin tungsten film is applied with pulse-plasma deposition, and carbothermic synthesis is performed by placing semiconductor substrate with thin tungsten film on graphite table and subject to heat treatment in vacuum at pressure of not more than 5·10-4 Pa, at temperature of 450 to 600°C, at exposure time at such temperatures of not less than 40 minutes.
EFFECT: reducing synthesis temperature of tungsten carbide and simplifying its formation method.
1 dwg
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