FIELD: microelectronics.
SUBSTANCE: invention relates to the field of microelectronics. To achieve the effect, a push-pull buffer amplifier based on complementary bipolar transistors is proposed, which contains an input (1) and an output (2) of the device, the first (3) and second (4) input transistors, the first (5) power supply bus, the output (6) transistor, second (7) power supply bus, auxiliary (8) transistor, reference current source (9), current mirror (10), additional transistor (11).
EFFECT: creation of an amplifier based on complementary bipolar transistors, in which the technical contradiction between the static consumption current Ip and the maximum output current in the load 
.
2 cl, 8 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| BIPOLAR FIELD ARSENIDE GALLIUM BUFFER AMPLIFIER | 2023 |
|
RU2796638C1 |
| FAST BUFFER AB CLASS AMPLIFIER | 2022 |
|
RU2790616C1 |
| HIGH-SPEED BUFFER AMPLIFIER WITH NONLINEAR CORRECTION CLASS AB | 2022 |
|
RU2790615C1 |
| HIGH-SPEED PUSH-PULL BUFFER AMPLIFIER ON COMPLEMENTARY FIELD TRANSISTORS | 2022 |
|
RU2784047C1 |
| GALLIUM BUFFER AMPLIFIER | 2022 |
|
RU2784046C1 |
| GALLIUM BUFFER AMPLIFIER | 2021 |
|
RU2771316C1 |
| CLASS AB BUFFER AMPLIFIER ON n-p-n BIPOLAR TRANSISTORS | 2022 |
|
RU2786630C1 |
| PUSH-PULL GALLIUM ARSENIDE BUFFER AMPLIFIER WITH A SMALL DEAD ZONE OF THE AMPLITUDE CHARACTERISTIC | 2022 |
|
RU2789482C1 |
| SOURCE SIGNAL FOLLOWER WITH A LOW SYSTEMATIC COMPONENT OF THE ZERO OFFSET VOLTAGE | 2022 |
|
RU2784373C1 |
| HIGH-SPEED OPERATIONAL AMPLIFIER WITH DIFFERENTIATED CORRECTION CIRCUITS IN BRIDGE INPUT DIFFERENTIAL CASCADE | 2023 |
|
RU2797168C1 |
