CLASS AB BUFFER AMPLIFIER ON n-p-n BIPOLAR TRANSISTORS Russian patent published in 2022 - IPC H03F3/26 

Abstract RU 2786630 C1

FIELD: microelectronics.

SUBSTANCE: invention relates to the field of microelectronics. To achieve the effect, a class AB buffer amplifier based on n-p-n bipolar transistors is proposed, which contains an input (1) and an output (2) of the device, an input transistor (3), the first (4) power supply bus, the first (5) current-stabilizing two-terminal, the second (6) power supply bus, first (7) output transistor, second (8) current-stabilizing two-pole, second (10) output transistor, auxiliary transistor (11), third (12) current-stabilizing two-terminal, auxiliary p-n junction (13) and auxiliary resistor (14).

EFFECT: creation of an amplifier based on the same type of n-p-n bipolar transistors, which provides the output of the device with an input voltage relative to a common bus with a gain close to unity and with load resistances that vary over a wide range.

1 cl, 6 dwg

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Authors

Zhuk Aleksei Andreevich

Prokopenko Nikolai Nikolaevich

Pakhomov Ilia Viktorovich

Dates

2022-12-23Published

2022-09-19Filed