METHOD FOR FORMING A POLYMER MEMRISTOR BASED ON A TWO-LAYER STRUCTURE SEMICONDUCTOR POLYMER-FERROELECTRIC POLYMER Russian patent published in 2022 - IPC H01L41/22 

FIELD: organic micro- and nanoelectronics.

SUBSTANCE: invention relates to the field of organic micro- and nanoelectronics, namely, the technology of forming organic polymer memristors. The method for forming a polymer memristor based on a two-layer structure of a semiconductor polymer-ferroelectric polymer consists in using polyaniline doped with terephthalic acid obtained by suspending emeraldine base polyaniline with terephthalic acid in a dimethyl sulfoxide/H₂O medium at room temperature, and as ferroelectric layer, a thin film of polyvinylene difluoride-trifluoroethylene copolymer is used, obtained by applying a solution of a ferroelectric polymer in acetonitrile to the surface of a conductive layer of polyaniline in the form of a thin film, with further evaporation of the volume of acetonitrile.

EFFECT: invention provides an increase in the stability and repeatability of the characteristics (switching voltage, resistance in low-resistance and high-resistance states) of memristors, the resistance of which changes when an electric current is passed through them.

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