HIGH-POWER UHF FIELD TRANSISTOR Russian patent published in 2012 - IPC H01L29/812 

FIELD: electricity.

SUBSTANCE: high-power UHF field transistor contains a semiconductor substrate with a structure of layers designed in the form of a direct sequence of a semi-insulating layer, a layer of n⁺ type conductivity, a stop layer, a buffer layer and an active layer; the thickness of the semi-insulating and the buffer layers is at least 30.0 and 1.0-20.0 mcm respectively; a part of the metallised hole for the common source electrode grounding, on the semiconductor substrate face side and at a depth equal to the sum total of the active, buffer and stop layers thicknesses, is designed as having a metallised bottom while the other part of the metallised hole for the common source electrode grounding, on the semiconductor substrate reverse side and at a depth equal to the sum total of the semi-insulating and the n⁺ type conductance layers thicknesses, is designed as blind in the form of a blanket layer of a highly thermally and electrically conductive material; the said parts of the metallised hole are completely or partly overlapped within the horizontal plane of their point of contact, asymmetrically towards the common drain electrode relative to the vertical axis of the metallised hole with cross section size equal to that of the field transistor active area elements topology; the integrated heat sink is simultaneously represented by the blanket layer of the highly thermally and electrically conductive material of the other part of the metallised hole.

EFFECT: increased output capacity and amplification factor, decreased weight and dimension characteristics, reduced cost, increased yield ratio and, accordingly, performance.

4 cl, 1 dwg, 1 tbl