APPARATUS FOR PLASMA PROCESSING OF SUBSTRATES Russian patent published in 2023 - IPC C23C16/452 C23C16/455 H01J37/32 

FIELD: chemistry.

SUBSTANCE: invention relates to methods for processing substrates and to the corresponding apparatus. In particular, the invention relates to reactors for plasma atomic layer deposition. An apparatus (100) for processing substrates and an appropriate method containing a reaction chamber (130) and a plasma feed line (115) are proposed, along which plasma components are introduced into the reaction chamber (130) for the deposition target (160). The plasma feed line (115) contains a removable input element (110), made with the possibility of increasing the speed of the gas jet. The removable inlet element (110) is formed by an outer pipe, which encloses a tubular inlet liner, the inner diameter of which is smaller than the inner diameter of the feed line.

EFFECT: providing improved delivery of reactive components to the deposition target, as well as the formation of a chemically resistant barrier layer between metal parts and plasma components.

13 cl, 7 dwg