FIELD: physics.
SUBSTANCE: invention relates to deposition reactors with plasma source. Installation for plasma atomic layer deposition includes gas line from source of chemically inactive gas to expansion device for supply of radicals, opened into reaction chamber, remote plasma source, system of gas flow control from source of chemically inactive gas through remote plasma source to expansion device for supply of radicals in whole period of plasma atomic layer deposition, reactor for plasma atomic layer deposition, configured to deposition of material in reaction chamber on at least one substrate by successive self-saturating surface reactions.
EFFECT: possibility of atomic layer deposition on heat-sensitive substrate at very low temperatures.
7 cl, 8 dwg, 1 ex
