FIELD: microelectronic engineering.
SUBSTANCE: invention relates to the field of microelectronic engineering, the proposed method is characterized by the fact that a hard mask with windows corresponding to the topographic pattern of the applied metal layer is made of a silicon wafer with a diameter that matches the diameter of a cover made of germanium and having an antireflection coating on one side, and on the other - a metal layer in the form of a previously deposited topological pattern. Alignment marks are formed on the rigid mask and on the lid to ensure oriented placement of said mask on the lid on its side, the reverse side bearing the AR coating. Then, a layer of photoresist is applied to the surface of the cover on the side of the metal deposition layer, and a window is formed in this photoresist layer by exposure and development methods to obtain a photoresist mask, the size of the windows of which exceeds the size of the windows in the hard mask and which correspond to the topographic pattern of the metal layer to be sprayed through the hard mask. Then, in accordance with the locations of the marks, a hard mask is glued onto the photoresistive mask, and a metal layer is deposited through the windows in the hard mask and the photoresistive mask onto the cover surface, followed by removal of the hard mask with an organic solvent.
EFFECT: providing oriented placement of the specified mask on the cover on its side, the back side, bearing the antireflection coating.
1 cl, 3 dwg
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Authors
Dates
2023-02-07—Published
2022-07-08—Filed