FIELD: dual-spectrum photosensitive devices.
SUBSTANCE: method is used to manufacture dual-spectrum photosensitive devices designed for independent registration of radiation in the near ultraviolet (UV) and mid-infrared (IR) ranges of the spectrum. A method for manufacturing a two-spectrum photosensitive element based on a Schottky barrier includes deposition of AuGe on the reverse side of the substrate, fast thermal annealing, deposition of Ti-Au on the reverse side of the substrate, deposition of barrier Au on the epitaxial layer, etching of barrier Au using mesa technology, formation of a mask photoresist for "explosion", "explosion" of Au with photoresist, while after the Ti-Au deposition operation, the following operations are carried out: formation of a photoresist mask on the reverse side of the substrate for Au-Ti-AuGe etching to the substrate, deposition of barrier Au on the reverse side of the substrate, etching of barrier Au using mesa technology.
EFFECT: manufacturing dual-spectrum photosensitive devices.
1 cl, 1 dwg
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Authors
Dates
2023-02-14—Published
2022-06-08—Filed