METHOD FOR MANUFACTURING A TWO-SPECTRUM PHOTOSENSITIVE ELEMENT BASED ON A SCHOTTKY BARRIER Russian patent published in 2023 - IPC H01L29/872 

Abstract RU 2790061 C1

FIELD: dual-spectrum photosensitive devices.

SUBSTANCE: method is used to manufacture dual-spectrum photosensitive devices designed for independent registration of radiation in the near ultraviolet (UV) and mid-infrared (IR) ranges of the spectrum. A method for manufacturing a two-spectrum photosensitive element based on a Schottky barrier includes deposition of AuGe on the reverse side of the substrate, fast thermal annealing, deposition of Ti-Au on the reverse side of the substrate, deposition of barrier Au on the epitaxial layer, etching of barrier Au using mesa technology, formation of a mask photoresist for "explosion", "explosion" of Au with photoresist, while after the Ti-Au deposition operation, the following operations are carried out: formation of a photoresist mask on the reverse side of the substrate for Au-Ti-AuGe etching to the substrate, deposition of barrier Au on the reverse side of the substrate, etching of barrier Au using mesa technology.

EFFECT: manufacturing dual-spectrum photosensitive devices.

1 cl, 1 dwg

Similar patents RU2790061C1

Title Year Author Number
METHOD FOR MANUFACTURING DUAL-SPECTRAL PHOTOSENSITIVE ELEMENT BASED ON SCHOTTKY BARRIER USING MESA TECHNOLOGY 2023
  • Budtolaev Andrej Konstantinovich
  • Budtolaeva Anna Konstantinovna
  • Dmitrienko Anastasiya Aleksandrovna
  • Khakuashev Pavel Evgenevich
RU2810635C1
TWO-SPECTRAL PHOTOSENSITIVE DEVICE 2019
  • Budtolaev Andrej Konstantinovich
  • Khakuashev Pavel Evgenevich
  • Kravchenko Nikolaj Vladimirovich
RU2708553C1
METHOD OF MANUFACTURING SCHOTTKY-BARIER-GATE FIELD-EFFECT TRANSISTORS 1979
  • Lipin V.S.
  • Ignat'Ev M.G.
SU814168A1
METHOD FOR DETERMINING THE ENERGY EQUIVALENT OF THE THICKNESS OF THE DEAD LAYER OF THE DETECTOR 2020
  • Trifonova Ekaterina Viktorovna
  • Chernykh Sergej Vladimirovich
  • Chernykh Aleksej Vladimirovich
  • Didenko Sergej Ivanovich
RU2756359C1
MANUFACTURING METHOD FOR HIGH-FREQUENCY LIMITED-CURRENT-INJECTION GUNN DEVICE 1992
  • Kanevskij Vasilij Ivanovich[Ua]
  • Sukhina Jurij Efimovich[Ua]
  • Il'In Igor' Jur'Evich[Ua]
RU2061277C1
METHOD OF PRODUCING VERTICALLY EMITTING LASER WITH INTRACAVITY CONTACTS AND DIELECTRIC MIRROR 2016
  • Blokhin Sergey Anatol'Evich
  • Maleev Nikolay Anatol'Evich
  • Kuz'Menkov Aleksandr Georgievich
  • Vasil'Ev Aleksey Petrovich
  • Zadiranov Yury Mikhailovich
  • Kulagina Marina Mikhailovna
  • Ustinov Viktor Mikhailovich
RU2703938C1
METHOD OF PRODUCING DIODES OF MEDIUM-WAVE INFRARED SPECTRUM 2012
  • Il`Inskaya Natal`Ya Dmitrievna
  • Matveev Boris Anatolievich
  • Remennyy Maksim Anatolievich
  • Usikova Anna Aleksandrovna
RU2599905C2
INJECTION LASER MANUFACTURING PROCESS 1990
  • Davydova E.I.
  • Lobintsov A.V.
  • Ryzhov I.Ju.
  • Uspenskij M.B.
  • Shishkin V.A.
SU1831213A1
CONTACT SHAPING METHOD FOR NANOHETEROSTRUCTURE OF PHOTOELECTRIC CONVERTER BASED ON GALLIUM ARSENIDE 2010
  • Andreev Vjacheslav Mikhajlovich
  • Kaljuzhnyj Nikolaj Aleksandrovich
  • Lantratov Vladimir Mikhajlovich
  • Soldatenkov Fedor Jur'Evich
  • Usikova Anna Aleksandrovna
RU2428766C1
METHOD FOR MANUFACTURING PHOTODIODES OF THE MEDIUM-WAVE IR SPECTRAL RANGE 2019
  • Matveev Boris Anatolievich
  • Remennyi Maksim Anatolievich
RU2726903C1

RU 2 790 061 C1

Authors

Budtolaev Andrej Konstantinovich

Khakuashev Pavel Evgenevich

Dates

2023-02-14Published

2022-06-08Filed