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1 831 213

(13)

A1

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IPC

(21) (22)

Application

4534477/25, 1990-08-22

(22)

Actual filing date

1990-08-22

(45)

Published

1996-09-27

(72)

Inventor

Davydova E.I.Lobintsov A.V.Ryzhov I.Ju.Uspenskij M.B.Shishkin V.A.

INJECTION LASER MANUFACTURING PROCESS Russian patent published in 1996 - IPC

Abstract SU 1831213 A1

FIELD: manufacture of semiconductor injection laser for optical data processing devices, measurement, medical, and computer engineering. SUBSTANCE: photoresist mask is formed on heteroepitaxial structure and mesastrip is etched in it by ion-chemical method; embossed surface is subjected to anode oxidation, then oxide is removed by selective etching, cutoff contact is deposited and then removed together with photoresist mask from top of mesastrip by photoresist explosion method, then resistive contact layer is deposited. EFFECT: improved optical characteristics of laser. 2 ex, 2 dwg

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SU 1 831 213 A1

Authors

Davydova E.I.

Lobintsov A.V.

Ryzhov I.Ju.

Uspenskij M.B.

Shishkin V.A.

Dates

1996-09-27—Published

1990-08-22—Filed

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