FIELD: experimental nuclear technology.
SUBSTANCE: invention relates to experimental nuclear technology. The field of application is the technology of surface-barrier detectors of nuclear radiation, in particular, the determination of the energy equivalent of the thickness of the dead layer and the optimization of its thickness taking into account the technological modes of the formation of the Schottky barrier. The method for determining the energy equivalent of the thickness of the dead layer of a surface-barrier detector includes irradiation with a collimated beam of heavy charged particles of two identical test detectors, which are p-i-n diodes with an open input window and a completely depleted p-layer, made of a semiconductor material on which a surface-barrier detector is created, while metallization of the studied Schottky barrier is applied to the input window of one of the test detectors, followed by measurement of the amplitude spectra of the test detectors, energy calibration of the amplitude spectra and processing of the measurement results with the calculation of the energy resolution FWHM for each of the test detectors and the calculation of the energy equivalent of the thickness of the dead layer FWHMSB created by metallization of the Schottky barrier under study, according to the formula:
,
FWHM2 is the energy resolution of the test detector with the metal system of the Schottky barrier under study applied to the input window, keV; FWHM1 is the energy resolution of the test detector, keV.
EFFECT: providing the possibility of determining the energy equivalent of the thickness of the dead layer of a surface barrier detector, taking into account the technological features of the formation of the Schottky barrier, as well as the possibility of comparing the modes of contact formation and the contribution of the dead layer to the full energy resolution of the detector.
1 cl, 2 dwg
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Authors
Dates
2021-09-29—Published
2020-12-29—Filed