METHOD FOR DETERMINING THE ENERGY EQUIVALENT OF THE THICKNESS OF THE DEAD LAYER OF THE DETECTOR Russian patent published in 2021 - IPC G01T1/24 H01L21/66 

Abstract RU 2756359 C1

FIELD: experimental nuclear technology.

SUBSTANCE: invention relates to experimental nuclear technology. The field of application is the technology of surface-barrier detectors of nuclear radiation, in particular, the determination of the energy equivalent of the thickness of the dead layer and the optimization of its thickness taking into account the technological modes of the formation of the Schottky barrier. The method for determining the energy equivalent of the thickness of the dead layer of a surface-barrier detector includes irradiation with a collimated beam of heavy charged particles of two identical test detectors, which are p-i-n diodes with an open input window and a completely depleted p-layer, made of a semiconductor material on which a surface-barrier detector is created, while metallization of the studied Schottky barrier is applied to the input window of one of the test detectors, followed by measurement of the amplitude spectra of the test detectors, energy calibration of the amplitude spectra and processing of the measurement results with the calculation of the energy resolution FWHM for each of the test detectors and the calculation of the energy equivalent of the thickness of the dead layer FWHMSB created by metallization of the Schottky barrier under study, according to the formula:

,

FWHM2 is the energy resolution of the test detector with the metal system of the Schottky barrier under study applied to the input window, keV; FWHM1 is the energy resolution of the test detector, keV.

EFFECT: providing the possibility of determining the energy equivalent of the thickness of the dead layer of a surface barrier detector, taking into account the technological features of the formation of the Schottky barrier, as well as the possibility of comparing the modes of contact formation and the contribution of the dead layer to the full energy resolution of the detector.

1 cl, 2 dwg

Similar patents RU2756359C1

Title Year Author Number
FAST NEUTRON DETECTOR 2013
  • Britvich Gennadij Ivanovich
  • Kol'Tsov Gennadij Iosifovich
  • Didenko Sergej Ivanovich
  • Chubenko Aleksandr Polikarpovich
  • Chernykh Aleksej Vladimirovich
  • Chernykh Sergej Vladimirovich
  • Baryshnikov Fedor Mikhajlovich
  • Sveshnikov Jurij Nikolaevich
  • Murashev Viktor Nikolaevich
RU2532647C1
METHOD OF MAKING SHORT-RANGE PARTICLE DETECTOR 2008
  • Eremin Vladimir Konstantinovich
  • Verbitskaja Elena Mikhajlovna
  • Eremin Igor' Vladimirovich
  • Tubol'Tsev Jurij Vladimirovich
  • Egorov Nikolaj Nikolaevich
  • Golubkov Sergej Aleksandrovich
  • Kon'Kov Konstantin Anatol'Evich
RU2378738C1
METHOD FOR MANUFACTURING OF INTEGRATED SCHOTTKY-pn DIODES BASED ON SILICON CARBIDE 2009
  • Grekhov Igor' Vsevolodovich
  • Ivanov Pavel Anatol'Evich
  • Potapov Aleksandr Sergeevich
  • Samsonova Tat'Jana Pavlovna
  • Kon'Kov Oleg Igorevich
  • Il'Inskaja Natal'Ja Dmitrievna
RU2395868C1
SEMICONDUCTOR DEVICE 1996
  • Ioffe V.M.
  • Maksutov A.I.
RU2139599C1
THE TRANSISTOR ON THE BASIS OF THE SEMICONDUCTING COMPOUND 2010
  • Anishchenko Ekaterina Valentinovna
  • Arykov Vadim Stanislavovich
  • Erofeev Evgenij Viktorovich
  • Ishutkin Sergej Vladimirovich
  • Kagadej Valerij Alekseevich
  • Nosaeva Ksenija Sergeevna
RU2442243C1
TRANSISTOR 1995
  • Ioffe V.M.
  • Maksutov A.I.
RU2143157C1
SEMICONDUCTOR DEVICE 1995
  • Ioffe Valerij Moiseevich
  • Maksutov Askhat Ibragimovich
RU2117360C1
TRANSISTOR 1995
  • Ioffe Valerij Moiseevich
  • Maksutov Askhat Ibragimovich
RU2119696C1
SEMICONDUCTOR DEVICE 1996
  • Ioffe V.M.
RU2163045C2
METHOD FOR MANUFACTURING SURFACE-BARRIER DETECTORS BASED ON N-TYPE CONDUCTIVITY SILICON 2021
  • Lashaev Sergej Ivanovich
RU2776345C1

RU 2 756 359 C1

Authors

Trifonova Ekaterina Viktorovna

Chernykh Sergej Vladimirovich

Chernykh Aleksej Vladimirovich

Didenko Sergej Ivanovich

Dates

2021-09-29Published

2020-12-29Filed