METHOD FOR MANUFACTURING DUAL-SPECTRAL PHOTOSENSITIVE ELEMENT BASED ON SCHOTTKY BARRIER USING MESA TECHNOLOGY Russian patent published in 2023 - IPC H01L29/872 

FIELD: photo sensors.

SUBSTANCE: method for manufacturing a dual-spectral photosensitive element based on the Schottky barrier using mesa technology is applicable in the production of photosensitive elements intended for independent recording of the near ultraviolet (UV) and mid-infrared (IR) spectral ranges. The method includes the formation of n-type conductivity on the GaP/GaP epitaxial structure, with charge carrier concentrations n=10¹⁶ cm^-3 and n=2*10¹⁹ cm^-3 in the epitaxial layer and in the substrate, respectively, ohmic contact to the substrate, sputtering of Au-Ge, followed by annealing, and sputtering of Au with a Ti sublayer onto the Au-Ge layer, local etching of a window in the GaP epitaxial layer to the GaP substrate, formation of Schottky diodes, sputtering of barrier Au onto the GaP substrate, in an etched window, and onto an epitaxial layer, followed by etching Au+ mesa technology, forming contacts to Schottky diodes by Au sputtering.

EFFECT: reduction in process operations and a reduction in process losses.

1 cl, 1 dwg