FIELD: hexagonal barium ferrite films production.
SUBSTANCE: invention relates to a technology for producing films of hexagonal barium ferrite, which can be used in non-reciprocal microwave devices: phase shifters, insulators, circulators. The method for processing a film magnetic material of barium hexaferrite includes depositing a film of barium hexaferrite with the composition BaFe12O19 on a sapphire substrate of epi-ready orientation (0001), after which the film in an open atmosphere is additionally exposed to plasma with an average mass temperature in the range of 3727÷9727°C for 50-60 c, at the same time, a DC plasma torch with vortex stabilization and an expanding channel of the output electrode is used as a plasma source, generating at the output a weakly diverging nitrogen plasma jet with a diameter D equal to 8÷10 mm.
EFFECT: formation of a pronounced texture of the barium hexaferrite film along the <0001> axis, and lowering the value of the coercive field in it to the values of (14330÷39000) А⋅m-1 (180÷490Oe) when the film is treated with plasma with a mass-average temperature in the range of 3727÷9727°C for 50-60 s; achievement of barium hexaferrite film saturation magnetization of 40÷42 А⋅m2kg-1 at mass average plasma temperature in the range of 3727÷4727°C; achievement of barium hexaferrite film saturation magnetization of 60÷62 А⋅m2kg-1 at mass average plasma temperature in the range of 7727÷9727°C.
1 cl, 6 dwg, 1 tbl, 3 ex
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Authors
Dates
2022-12-26—Published
2022-07-14—Filed