FIELD: electronic engineering.
SUBSTANCE: invention relates to electronic engineering and may be used to form ohmic contacts in silicon devices, for example, devices, which include photosensitive elements operating in photovoltaic mode, limiting diodes, rectifiers, solar cells, etc. Formation of ohmic contacts to silicon by means of a bilayer Ti/Au metallisation system includes vacuum deposition of bilayer metallization system consisting of Ti 0.02 micron and Au 0.5 micron films, extraction of contact pattern by means of photolithography and rapid thermal annealing in hydrogen H2 atmosphere at temperature of 340°C for 20 seconds.
EFFECT: invention provides for forming ohmic contacts with a small contact resistivity value providing the required value of series resistance, which provides an increase in the percentage of good devices manufacturing.
1 cl, 4 dwg
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