FIELD: microelectronics technologies.
SUBSTANCE: method for forming an optically transparent ohmic contact to the surface of the semiconductor optical waveguide electrooptic modulator made based on heteroepitaxial pin InP/InGaAs structure includes sputtering of contact electrode film on surface p+-InGaAs by magnetron sputtering with subsequent deposition on its surface of silicon nitride dielectric layer by plasma-chemical deposition, formation of a dielectric mask by performing application/exposure and developing photoresist films with subsequent plasma-chemical etching of dielectric films, removal of photoresist mask, plasma-chemical etching of contact film of electrode and semiconductor of p-type conductivity along mask of formed dielectric pattern, forming a dielectric mask by performing application/exposure and developing photoresist films with subsequent plasma-chemical etching of dielectric films, removal of the photoresist mask, by plasma-chemical etching of conductivity semiconductor of i-type by mask of formed dielectric pattern, removal of dielectric mask residues by plasma-chemical etching followed by annealing of formed electrode of electrode contact film, forming a dielectric mask by performing application/exposure and developing photoresist films with subsequent plasma-chemical etching of dielectric films, removal of the photoresist mask, plasma-chemical etching of the n-type conductivity semiconductor by the mask of the formed dielectric pattern and removal of the dielectric mask residues by plasma-chemical etching, and as contact electrode film optically transparent electroconductive film ITO deposited by reactive magnetron sputtering is used.
EFFECT: achieved technical result consists in provision of transparency of ohmic contact of control electrode EOM for optical radiation passing through contact, possibility of forming an EOM using a control electrode with a waveguide self-aligned with the waveguide, as well as to increase percentage yield of EOM fit specimens and improve quality of manufactured contact.
1 cl, 4 dwg
Title | Year | Author | Number |
---|---|---|---|
METHOD OF PRODUCING MESA STRUCTURE OF STRIP LASER | 2016 |
|
RU2647565C1 |
METHOD OF MAKING OHMIC CONTACT TO ALGAN/GAN | 2018 |
|
RU2696825C1 |
PHOTOCONDUCTIVE ANTENNAS MANUFACTURING METHOD | 2018 |
|
RU2731166C2 |
METHOD OF PRODUCING VERTICALLY EMITTING LASER WITH INTRACAVITY CONTACTS AND DIELECTRIC MIRROR | 2016 |
|
RU2703938C1 |
METHOD FOR PRODUCING OHMIC CONTACT WITH LOW SPECIFIC RESISTANCE TO PASSIVATED GALLIUM NITRIDE HETEROSTRUCTURE ON SILICONE SUBSTRATE | 2020 |
|
RU2748300C1 |
METHOD FOR MANUFACTURING OF SEMICONDUCTOR INSTRUMENTS | 1997 |
|
RU2131631C1 |
METHOD FOR MANUFACTURING OPTICAL DEVICES | 2002 |
|
RU2291519C2 |
SEMICONDUCTOR DEVICE MANUFACTURING PROCESS | 1990 |
|
SU1823715A1 |
METHOD FOR MANUFACTURING T-SHAPED GALVANIC GATE IN HIGH-FREQUENCY FIELD-EFFECT TRANSISTOR | 2020 |
|
RU2746845C1 |
METHOD OF FIELD EFFECT TRANSISTOR PRODUCTION WITH SCHOTTKY BARRIER | 2007 |
|
RU2349987C1 |
Authors
Dates
2020-08-13—Published
2019-12-17—Filed