FIELD: technological processes.
SUBSTANCE: method comprises the oxidation of epitaxial structure surface, the formation of contact windows in the silicon oxide by photolithography method, the formation of the Schottky contact by metal sputtering and explosive photolithography, the heat treatment of Schottky contact, the formation of contact metallization, the verification of electrical parameters, additional determination of barrier height and the non-ideality of the Schottky diode VAC after explosive photolithography, wherein barrier height should be not less than 75%, and the coefficient of non-ideality is not more than 130% from values of a suitable Schottky diode.
EFFECT: increase in the yield of suitable Schottky diodes.
2 cl, 1 dwg
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