METHOD OF PRODUCING MESA STRUCTURE OF STRIP LASER Russian patent published in 2018 - IPC H01S5/32 

FIELD: microelectronics.

SUBSTANCE: use: microelectronics, semiconductor radiation technology, for the production of mesa structure of strip lasers. Concept of the invention is as follows: method includes forming an ohmic contact to the contact layer of the p-type conductivity of the laser heterostructure by the explosive photolithography method, amplification of ohmic contact by local galvanic deposition, formation of the mesa structure of a strip laser by plasma-chemical etching, ignition of ohmic contact by rapid thermal annealing.

EFFECT: at the same time, the complexity of manufacturing the mesa structure of a strip laser is reduced by eliminating technological operations to create and remove a protective mask when forming a mesa structure of the strip type and to precisely match the topology of the ohmic contact and the mesa structure topology.

1 cl, 3 dwg