FIELD: microelectronics.
SUBSTANCE: invention can be used in the production of semiconductor devices and integrated circuits. The aim of the invention is to increase the reliability of the contact of the chip with the base of the housing and the stability of the attachment process. The essence of the method lies in the fact that the soldering temperature is within 420±30°C and the duration of the process is 3.5±2 s. Next, on the surface of the Ge-Al alloy layer, a layer of aluminium with a thickness of 35÷155 nm is applied by spraying in vacuum; then the plate is divided into individual chips by scribing with diamond disks; the crystal is soldered at 420±30°C for 3.5±2 s to a chip holder coated with a metallized layer of aluminium or gold.
EFFECT: increase in the reliability of the contact of the chip with the base of the housing and the stability of the attachment process.
1 cl
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Authors
Dates
2023-06-27—Published
2021-06-02—Filed