FIELD: microelectronics.
SUBSTANCE: invention relates to microelectronics; it can be used in the production of semiconductor devices and integrated microcircuits. The purpose of the invention is an increase in the reliability of a contact of a crystal with a basement of a case and stability of an attachment process. The essence of the method is in that titanium-germanium are applied to a back side of a silicon plate in series in a single technological cycle. The plate is separated into crystals, and crystals are soldered to the basement of the case at a temperature of 290±20°C for 3±1 s.
EFFECT: increase in the reliability of a contact of a crystal with a basement of a case, when carrying out a process of spraying a titanium-germanium (Ti-Ge) layer in a single technological cycle.
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