METHOD OF FORMING CONTACT TO DRAIN REGION OF SEMICONDUCTOR DEVICE Russian patent published in 2014 - IPC H01L21/58 

FIELD: chemistry.

SUBSTANCE: invention relates to microelectronics and can be used in the production of semiconductor devices and integrated circuits. The invention improves the reliability of contact between a chip and a housing base and stability of the connection process. In the method of connecting a semiconductor chip to the chip holder of a semiconductor device, two metals - titanium and germanium - are successively sputtered onto the mounting surface of the chip in one process cycle. The wafer is divided into chips and the chips are soldered to the housing base at 250-280°C for 2-3 s.

EFFECT: combination of sputtered metals provides reliable contact between the chip and the housing base, complete distribution of the solder on the surface of the chip, absence of voids in the solder and improved output characteristics of the device.