FIELD: microelectronics.
SUBSTANCE: invention relates to microelectronics; it can be used in the production of semiconductor devices and integrated microcircuits. A method for the formation of Ti-Ge film on a surface of a silicon plate includes placement of the silicon plate in an installation for vacuum spraying and Ti-Ge spraying in a single technological cycle, film is sprayed with a thickness of 1.5±0.5 mcm, and spraying time is 4±2 min.
EFFECT: invention provides an increase in the reliability of contact of a crystal with a case basement and stability of a process of connection, when using film in crystal planting on the case basement.
1 cl, 3 ex
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