METHOD FOR TITAN-GERMANIUM CONTACT LAYER CREATION Russian patent published in 2009 - IPC H01L21/283 

Abstract RU 2343586 C1

FIELD: electronics.

SUBSTANCE: invention is attributed to microelectronics and can be used in production of semiconductor devices and integral circuits. Essence of invention: in the method of attaching silicon chip to chip holder, chip seating surface is successively sputtered with two titan-germanium metals, and chip to chip holder soldering is carried out at temperature of 280-300°C.

EFFECT: improvement of chip with chip-holder contact reliability and stability of attachment process.

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RU 2 343 586 C1

Authors

Ismailov Tagir Abdurashidovich

Shakhmaeva Ajshat Rasulovna

Shangereeva Bijke Alievna

Dates

2009-01-10Published

2007-07-16Filed