SINGLE-TRANSISTOR LOGICAL VALVE AND WITH ARCHITECTURE WITHOUT OVERLAPPING GATE-DRAIN/SOURCE AREAS Russian patent published in 2017 - IPC H01L29/772 H03K19/20 

FIELD: physics.

SUBSTANCE: single-transistor logical valve AND with an architecture without overlapping gate-drain/source areas includes front and back gates that extend longitudinally along the working area of the transistor, drain and source areas with contacts to the indicated drain and source regions, a front gate and submerged oxides. The valve AND is made on the structure of "germanium on the insulator", the front gate is made in the form of three identical front gates with three identical front gate-like oxides. Reverse gate is made in the form of three identical return gates.

EFFECT: increasing the density of integration by combining three logical signals on a single-transistor structure, which reduces the constructively topological complexity of digital circuits, and reduces the power consumption level due to the use of germanium as the main material of the transistor, which has a much higher mobility of charge carriers in comparison with silicon.

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