FIELD: vacuum and plasma technology.
SUBSTANCE: invention can be used to carry out the processes of ion etching of materials, the implantation of metal and semiconductor ions, and the deposition of thin-film coatings. The method involves formation of high power pulsed magnetron discharge plasma on a preheated target. A pulsed discharge with following parameters: voltage up to 2 kV, current 10-500 A, duration 10-1000 mcs, repetition rate up to 1 kHz, is created in a pre-ionized volume above the surface of a heated target, separated by a heat-insulating base with high electrical conductivity. The target is heated in a DC magnetron discharge in argon with a power density above 100 W/cm2 to a temperature at which the saturated vapor pressure of the material becomes approximately 0.5 Pa or higher, after which the argon supply is turned off and the discharge burns exclusively in the material vapor targets. The pulsed magnetron discharge formed in this medium is characterized by the degree of plasma ionization above 90% for a wide range of materials.
EFFECT: increased content of solid ions in plasma up to 90-98.
1 cl, 1 dwg
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Authors
Dates
2023-08-08—Published
2022-02-09—Filed