METHOD OF DETERMINING CHARGE CARRIER CONCENTRATION PROFILE IN SEMICONDUCTOR QUANTUM-DIMENSIONAL STRUCTURE Russian patent published in 2012 - IPC G01N21/63 

FIELD: physics.

SUBSTANCE: method of determining charge carrier concentration profile in a semiconductor quantum-dimensional structure involves measuring the luminescence spectrum at a low excitation level. The excitation level is then raised until there is energy shift of the emission line from recombination of quantum-dimensional, spatially confined charge carriers and the charge carrier concentration profile is determined from the value of the shift of the emission line using a self-consistent solution of Schrodinger and Poisson equations.

EFFECT: possibility of use in determining charge carrier concentration profile in a semiconductor quantum-dimensional structure.