METHOD FOR DETERMINING PARAMETERS OF SEMICONDUCTOR STRUCTURES Russian patent published in 2011 - IPC G01R31/26 

Abstract RU 2437112 C1

FIELD: electricity.

SUBSTANCE: method involves application to the specimen of offset voltage and variable voltage of test signal, measurement of relationships of capacity and conductivity of the specimen and sequences of the first electrical parameter at each value of the sequence of the second electrical parameter at a number of temperature values of specimen and determination parameters of the structure using the obtained relationships; at that, as the first electrical parameter there used is voltage frequency of test signal and as the second one - offset voltage.

EFFECT: improving accuracy.

6 dwg

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RU 2 437 112 C1

Authors

Zubkov Vasilij Ivanovich

Kucherova Ol'Ga Vladimirovna

Jakovlev Il'Ja Nikolaevich

Dates

2011-12-20Published

2010-06-22Filed