METHOD FOR UHF HIGH-POWER TRANSISTORS MANUFACTURING Russian patent published in 2012 - IPC H01L21/335 

FIELD: electricity.

SUBSTANCE: method for UHF high-power transistors manufacturing includes formation of transistor topology semiconductor substratum on the face side by electronic lithography and photolithography methods, metals spraying on, dielectrics application and etching, cathodic electrodeposition of gold, formation of preset size grooves on the face side outside the transistor topology, substrate thinning, formation of grounding through holes for the transistors source electrodes, formation of a common integrated heat sink, formation of a integrated heat sink for each transistor crystal, semiconductor substrate division into transistor crystals; one uses a semiconductor substrate with the preset structure of active layers having two stop layers with the preset distance between them, the stop layers ensuring minimum thermal resistance; the semiconductor substrate reverse side thinning is performed down to the stop-layer located close to such side; grounding through holes are formed immediately on the source electrodes with the common integrated heat sink thickness is set by the type of the transistor crystal subsequent mounting.

EFFECT: enhanced output capacity through reduction of thermal resistance, parasitic of the electric resistance in series and source electrodes grounding inductance; increased yield ratio, repeatability and functionalities extension.

4 cl, 1 dwg, 1 tbl